Solid State Drive Samsung 850 EVO 500 GB M2

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Tehnologia unica si inovatoare 3D V-NAND flash este o descoperire in depasirea limitarilor densitatii, performantei si rezistentei. 3D V-NAND este realizata prin asezarea a 32 de straturi de celule, unul peste altul, rezultatul fiind o mai mare densitate si o performanta mai buna.
Tehnologie TurboWrite pentru viteze de citire/scriere de neegalat
Obtineti performanta de citire/scriere ridicata pentru a maximiza experienta de utilizare a calculatorului cu Samsung TurboWrite. 850 EVO ofera o rata de transfer la citire de pana la 540 MB/s si 520 MB/s la scriere.
Utilizare de durata cu imbunatatirea eficientei energetice sustinuta de 3D V-NAND
850 EVO ofera bateriei o durata de viata semnificativ mai mare cu un controler optimizat pentru 3D V-NAND care permite activarea Device Sleep la o eficienta ridicata de 2mW.
In trei pasi simpli software-ul One-stop Install permite un transfer rapid al datelor si aplicatiior la 850 EVO.
Protectie Dynamic Thermal Gurd
Monitorizeaza in mod constant si mentine temperaturile ideale pentru ca unitatea sa functioneze in conditii optime pentru asigurarea integritatii datelor. Thermal Guard reduce temperatura atunci cand pragul critic este depasit.
Summary
- SATA 6Gb/s SSD for Client PCs
- M.2 (2280)
- Samsung V-NAND
- Samsung Magician Software for SSD
management
- Samsung Data Migration Software
V-NAND Technology and THE
SAMSUNG SSD 850 EVO Series
Samsung’s unique and innovative V-NAND
flash memory architecture is a
breakthrough in overcoming the density
limitations, performance and endurance of
today’s conventional planar NAND
architecture. V-NAND is fabricated by
stacking cell layers vertically over one
another rather than decreasing the cells
dimensions and trying to fit itself onto a
fixed horizontal space resulting in higher
density and better performance utilizing a
smaller footprint.
The 850 EVO Series is the advanced
consumer SSD powered by V-NAND
technology that maximizes everyday
computing experiences with optimized
performance and enhanced reliability.
Optimized performance for
everyday computing
experiences
Powered by Samsung's cutting-edge V-NAND
technology, the 850 EVO M.2 delivers topclass sequential and random read and write
performance to optimize everyday computing
experiences.
The 850 EVO M.2 is seamlessly integrated
with V-NAND, MGX controller, DRAM and
software for high optimization. Like the 2.5”
form factor model, the 850 EVO M.2 maximizes
user experience with trace-based benchmark,
which means that the 850 EVO M.2 gives
form factor flexibility for SATA 6Gb/s interface
by providing various yet standardized option.
Therefore, you can enjoy Samsung’s latest
Samsung SSD 850 EVO M.2
technology no matter which form factor your
device supports.
Reinforcement of TurboWrite
Technology
Samsung was the first one to introduce
TurboWrite technology to sequential write
performance in the early stages of the 840
EVO Series. With TurboWrite Technology, write
speeds have been significantly accelerated
during data transfer by creating a highperformance write buffer in an SSD. If a
consecutive write operation (i.e. no idle time)
exceeds the size of a buffer, the transfer will
exit TurboWrite and be processed at ”After
TurboWrite” speeds. Once the buffer is cleared,
the TurboWrite performance will resume.
However, since the buffer size for TurboWrite
is more than sufficient for everyday computer
use, users can experience accelerated speeds
for most workloads.
Guaranteed endurance and
reliability for maximum use
Guaranteed endurance
The 850 EVO Series delivers guaranteed
endurance and reliability by doubling the
TeraBytes Written(TBW) compared to the
previous generation 840 EVO Series backed by
an industry leading 5 year warranty.
With twice the endurance of a typical NAND
flash SSD, the 850 EVO Series will keep
working as long as you do. All form factors of
the 850 EVO Series are guaranteed with a 5
year limited warranty or 75TBW for 120GB and
250GB, 150TBW for 500GB and 1TB.
Enhanced reliability with improved
sustained performance
Through enhanced reliability with improved
sustained performance, the 850 EVO Series
boasts long-term dependable performance of
up to 40% longer than the 840 EVO Series
with minimized performance degradation. You
can use it every day when doing work or
entertaining yourself knowing that it will keep
performing even with heavy daily workloads
over the years.
Advanced data encryption
Regardless of which form factor it is, the
850 EVO Series provides the same data
encryption feature as the 840 EVO Series does.
The Self-Encrypting Drive (SED) security
technology will help keep your data safe at all
times. The device is equipped with an AES 256-
bit hardware-based encryption engine to
ensure that your personal files remain secure.
A hardware-based encryption engine secures
your data without performance degradation
that you may experience with a softwarebased encryption. Furthermore, the 850 EVO
M.2 is compliant with advanced security
management solutions (TCG Opal and IEEE
1667). Magician will guide you on ”How to use
security features”. Moreover, you can erase or
initialize the data with the crypto erase service
with PSID.
Efficient power management
for all PC applications gaming
Power consumption affects everyone. With
850 EVO Series, you actually save of up to 50%
more on power than with the 840 EVO Series
during write operations thanks to V-NAND
consuming half the power of 2D planar NAND.
Plus, whether you would like to preserve
battery life for longer cordless use or just save
costs, power management is important. Device
sleep signals the SSD to enter a low power
state which is vital for ultra-books and other
battery powered devices. With 850 EVO M.2’s
Device Sleep feature at a highly efficient 2mW,
you get longer battery life on your notebook
thanks to a controller optimized for V-NAND.
With the 850 EVO M.2, you can work and play
longer without having to plug in.
Samsung 850 EVO M.2 Specifications
Capacities: 120GB, 250GB, 500GB
Dimensions (LxWxH): Max 80.15 x Max 22.15 x Max 0.8 (mm)
Interface: SATA 6Gb/s (compatible with SATA 3Gb/s and SATA 1.5Gb/s)
Form Factor: M.2 (2280)
Controller: Samsung MGX controller
NAND Flash Memory: Samsung 32 layer 3D V-NAND
DRAM Cache Memory: 512MB LPDDR3
Performance:
Sequential Read: Max. 540 MB/s
Sequential Write: Max. 500 MB/s
4KB Random Read (QD1): Max. 10,000 IOPS
4KB Random Write (QD1): Max. 40,000 IOPS
4KB Random Read (QD32): Max. 97,000 IOPS
4KB Random Write (QD32): Max. 89,000 IOPS
Weight Max: 7g (500GB)
Power Consumption:
Active Read/Write (Average): Max. 2.4W(500GB)/ Max. 3.5W(1TB)
Idle: Max. 50mW, Device Sleep: 2mW